Igor Serafimovich Tashlykov (June 4, 1946 – June 7, 2016) was a Soviet and Belarusian physicist, who was awarded the Doctor of Physical and Mathematical Sciences degree (1989). He was a member of the Belarusian Physical Society (1995). He carried out research at the Research Institute of Applied Physical Problems (APP) of the Belarusian State University (1972-1989 - Senior Researcher), the Belarusian State Technological University (1989-2003 - Professor), the Maxim Tank Belarusian State Pedagogical University (BSPU) (2003-2007 - Dean of the Faculty of Physics; 2007-2013 - Head of the Department of General Physics; 2013-2016 - Professor of Physics and Methods of Teaching Physics). Tashlykov was an expert in the field of the surface modification of solids using ion-beam technologies. In solid-state electronics, he developed criteria for controlling the transformation of the structure of ion-implanted gallium arsenide and silicon that were based on calculations of the energy density released in the elastic processes of cascade collisions of atomic nuclei. He also developed methods for modifying solids by atomic mixing and ion-assisted deposition of coatings. Tashlykov developed the theory for, and carried out experimental studies in connection with, the ion-assisted deposition of thin films. Tashlykov received an Award from the President of Belarus for outstanding contributions to the social and economic development of the Republic in 2012. He also founded a research group devoted to the study of the physical characteristics and properties of the surfaces of materials such as metals, semiconductors, and elastomers. He was the author of three monographs published in Belarus and in the United States.
Biography
Tashlykov was born in North Korea to Serafim Dmitrievich Tashlykov, a pilot, and Nina Semenovna Tashlykova a nurse, whilst they were stationed there with the Soviet armed forces before he moved to Babruysk in 1952. He moved to Minsk with his parents in 1962 and finished secondary school No. 27 in 1964 with a silver medal before entering the Belarusian State University to study physics, graduating in 1969 with honors from the Physics Faculty with a specialization in solid state physics. He then started full-time postgraduate study before transferring to correspondence postgraduate study in 1970 whilst working as a junior researcher in the laboratory of experimental physics and physical electronics of the BSU. In 1971 he transferred to the Elionics Laboratory within the Research Institute of Applied Physical Problems (APP) at BSU. He became a senior researcher in 1972 and was awarded the degree of Candidate of Sciences in 1973 based on his thesis Investigation of radiation effects in bismuth and its alloys. In 1976 he became a senior research fellow before completing his doctoral thesis on the subject Modification and study of structure in crystals with different types of bonds (Si, GaAs and Ni) by nuclear physical methods at Kharkov State University in 1989. After receiving his doctoral thesis he worked in the Department of Physics at the Belarusian Institute of Technology, later renamed into the Belarusian Technological University, until 2003, becoming a professor in 1992. In 2003, at the invitation of the rector of the Maxim Tank Belarusian State Pedagogical University, Kukharchik Petr Dmitrievich, he went to work as the Dean of the Physical Faculty. He was Head of the Department of Experimental Physics from 2007 and Professor of the Department of Physics and Methods of Teaching Physics from 2013. June 7, 2016, died of stroke in Minsk. He was buried in the honorary lot No. 114 of the columbarium of the Eastern (Moscow) cemetery in Minsk.
Scientific activity Tashlykov was primarily focused on the modification of the structure and properties of solids using ion-beam and ion-plasma methods and technologies. This included the study of physical and chemical processes occurring during the interaction of accelerated ions with elastomers as well as the formation of thin film (coating) / substrate systems.
Postgraduate studies Tashlykov began his scientific work by studying radiation defects in bismuth and its alloys in 1969 under the guidance of Georgy Alexandrovich Humansky and Valery Ivanovich Prokoshin. Due to a lack of radiation sources samples were irradiated on a microtron at the Physical Institute of Academy of Sciences (PIAS) of the USSR and a U-120 cyclotron in Kiev at the Institute for Nuclear Research of the Academy of Sciences of the Ukrainian SSR. As a result of successful work Tashlykov was recommended for a one-year internship at the Department of Ionometry of the University of Jena in East Germany in 1971–1972 where he studied protonography and ionometry, later called spectroscopy of Rutherford backscattering (RBS) ions in combination with their channeling. It was later noted that Tashlykov was among the first Soviet scientists who held the years experiments in 1971-1972 using ion channeling for layer-by-layer analysis of radiation damages in single crystals. These results were the basis for the development of the method of calculating the concentration of radiation defects in irradiated single crystals, using the method of ionometry, taking into account the multiple scattering of channeled helium ions. On September 25, 1973, Tashlykov defended his Ph.D. thesis on "The study of radiation effects in bismuth and its alloys" in the BSU.
Work at the Belarusian State University
At Belarusian State University Tashlykov started studying radiation disturbances in bismuth and its alloys by nuclear physical methods. Tashlykov initiated the creation of a research complex of nuclear physical methods on the basis of the ESU-2 electrostatic accelerator of horizontal type in the Belarusian State University in 1975–1979. This legendary accelerator number 2, built shortly after the World War II in the laboratories of Kharkov Institute of Physics and Technology, was used in the 1960s and 1970s as an electron accelerator at Lebedev Physical Institute. With the assistance of the director of the Research Institute of the APP, Academician of the Academy of Sciences of Belarus, A.N. Sevchenko, head of the semiconductor laboratory Academician, B. M. Vul passed this accelerator to Belarus.
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