K. Andre Mkhoyan

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K. Andre Mkhoyan belongs to engineering; place it in that map before memorising details.
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Reference excerpt

K. Andre Mkhoyan (born 1974) is the Ray D. and Mary T. Johnson Chair and Professor in the Department of Chemical Engineering and Materials Science at the University of Minnesota. He is recognized for advancing both fundamental scientific understanding and diverse applications of scanning transmission electron microscopy (STEM) techniques. He was elected as a Microscopy Society of America Fellow in 2024 for "seminal contributions to the understanding of electron beam channeling, quantification of imaging and spectroscopy in STEM, and for his discovery of fundamentally new behavior in crystal point and line defects using STEM." According to Web of Science, he has produced over 180 published works that have been cited over 9800 times, with an h-index of 44 as of October 25, 2024.

Early life and education Andre Mkhoyan was born in 1974 in Yerevan, Armenia. He received his high school diploma from the prestigious Artashes Shahinyan Physics-Mathematics School. In 1996, Mkhoyan graduated with a B.Sc. (Hons.) in Physics from the Yerevan State University. Following graduation, he moved to the United States to pursue a research career specialized in transmission electron microscopy (TEM). After working at Bell Labs as a research scientist in support of the SCALPEL projection electron-beam lithography project, he began graduate studies in Applied and Engineering Physics at Cornell University in 1999. Working under the supervision of Professor John Silcox (1935–2024), Mkhoyan received his M.S. in Engineering Physics in 2003 and Ph.D. in Applied Physics in 2004. His dissertation was titled "Scanning Transmission Electron Microscopy Study of III-V Nitrides." In his postdoctoral research studies, Mkhoyan worked with Professor Silcox at Cornell as well as with Dr. Philip E. Batson at the IBM TJ Watson Lab. In this period, he was one of the first people to work on a prototype aberration-corrected STEM on a VG microscope retro-fitted with a NION probe-corrector. He worked extensively on understanding electron beam channeling, spectroscopy and quantification methods during this time. In 2008, Mkhoyan joined the University of Minnesota as an Assistant Professor of Chemical Engineering and Materials Science where he continues to be a professor and lead an electron microscopy research group. He is also the chair for the Electron Microscopy Management Committee at the University of Minnesota.

Scientific contributions Mkhoyan has contributed to fundamental studies of electron microscopy physics as well as pioneered challenging applications of high resolution analytical STEM, specifically, multimodal use of EELS and EDX signals in conjunction with annular dark-field imaging to materials science. He has been credited for pushing the boundaries of atomic-resolution analytical STEM for the better understanding of point, line and planar defects, including discoveries of two new line defects and interaction mechanisms between dopant atoms and dislocations. He has worked extensively on development of new methods of STEM-based atomic-resolution imaging and EELS spectroscopy of highly-beam-sensitive zeolites and metal organic frameworks. and atomic-resolution in-situ STEM work. His research has improved understanding of electron beam channeling and quantification of imaging and EELS spectroscopy in STEM, which includes identification of the factors behind electron beam channeling even in non-periodic crystals and discovery of new kind of sub-atomic beam channeling.

Works Andre Mkhoyan has authored numerous journal articles describing significant advances in STEM, defects in materials, nanoporous materials, complex oxides, and two-dimensional/single-layer materials which includes but is not limited to:

Dopant Segregation Inside and Outside Dislocation Cores in Perovskite BaSnO3 and Reconstruction of the Local Atomic and Electronic Structures; H. Yun; A. Prakash; T. Birol; B. Jalan, K. A. Mkhoyan; Nano Lett. 21, 10, 4357 (2021) Metallic line defect in wide-bandgap transparent perovskite BaSnO3; H. Yun, M. Topsakal, A. Prakash, B. Jalan, J. S. Jeong, T. Birol, K. A. Mkhoyan; Sci. Adv. 7, eabd4449 (2021) Uncovering atomic migrations behind magnetic tunnel junction breakdown; H. Yun, D. Lyu, Y. Lv, B. R. Zink, P. Khanal, B. Zhou, W. G. Wang, J. P. Wang, K. A. Mkhoyan; ACS Nano 18, 25708 (2024) One-dimensional intergrowths in two-dimensional zeolite nanosheets and their effect on ultra-selective transport; P. Kumar, D. W. Kim, N. Rangnekar, H. Xu, E. O. Fetisov, S. Ghosh, H. Zhang, Q. Xiao, M. Shete, J. I. Siepmann, T. Dumitrica, B. McCool, M. Tsapatsis, K. A. Mkhoyan; Nature Mater. 19, 443 (2020) A New Line Defect in NdTiO3 Perovskite; J. S. Jeong, M. Topsakal, P. Xu, B. Jalan, R. M. Wentzcovitch, K. A. Mkhoyan; Nano Lett. 16, 6816 (2016) Probing core-electron orbitals by scanning transmission electron microscopy and measuring the delocalization of core-level excitations; J. S. Jeong, M. L. Odlyzko, P. Xu, B. Jalan, and K. A. Mkhoyan; Phys. Rev. B 93, 165140 (2016) Imaging 'Invisible' Dopant Atoms in Semiconductor Nanocrystals; A. A. Gunawan, K. A. Mkhoyan, A. W. Wills, M. G. Thomas, D. J. Norris; Nano Lett. 11, 5553 (2011) Radiolysis to knock-on damage transition in zeolites under electron beam irradiation; O. Ugurlu, J. Haus, A. A. Gunawan, M. G. Thomas, S. Maheshwari, M. Tsapatsis, K. A. Mkhoyan; Phys Rev B, 83, 113408 (2011) Atomic and Electronic Structure of Graphene-Oxide; K.A. Mkhoyan, A.W. Contryman, J. Silcox, D.A. Stewart, G. Eda, C. Mattevi, S. Miller, M. Chhowalla; Nano Lett. 9, 1058 (2009) Full recovery of electron damage in glass at ambient temperatures; K.A. Mkhoyan, J. Silcox, A. Ellison, D. Ast, R. Dieckmann, Phys. Rev. Lett. 96, 205506 (2006)

References

Illustrations

Worked examples

Example 1 — a first encounter with K. Andre Mkhoyan

Start with the simplest possible case. Write down what K. Andre Mkhoyan claims or describes in one sentence, then invent the smallest concrete situation in which that sentence is true. In engineering, the smallest case is usually a single object, a single equation or a single measurement. Check that every symbol or term in your sentence has a meaning in that case.

Example 2 — changing one variable

Take the situation from Example 1 and change exactly one quantity: double it, halve it, or set it to zero. Predict what should happen to K. Andre Mkhoyan before you calculate. Comparing your prediction with the result is the fastest way to find out whether you understand the idea or only the words.

Example 3 — an exam-style question

Typical questions about K. Andre Mkhoyan ask you to (a) state it precisely, (b) apply it to given data, and (c) explain a limitation. Practise writing all three answers in under five minutes; the third part is what separates a full-mark answer from an average one.

Applications of K. Andre Mkhoyan

In research: K. Andre Mkhoyan appears in engineering research whenever the underlying quantities have to be modelled precisely. Papers usually cite it as a starting assumption and then explore where it breaks down.
In technology and industry: Engineering practice reuses K. Andre Mkhoyan in design rules, simulations and safety margins. Knowing the idea lets you read a specification sheet and understand why the numbers look the way they do.
In the classroom: K. Andre Mkhoyan is common in secondary-school and first-year university syllabi. It links to neighbouring topics 1974 births, American materials scientists, American physicists, so understanding it makes those chapters shorter.
In everyday life: Look for K. Andre Mkhoyan outside the textbook — in sport, cooking, traffic, electronics or the sky above you. An example you found yourself is remembered far longer than one you were given.

How to study K. Andre Mkhoyan in 20 minutes

Read the reference excerpt below once, without taking notes.
Close the page and write down what K. Andre Mkhoyan means in your own words.
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Frequently asked questions

What is K. Andre Mkhoyan in simple terms?

K. Andre Mkhoyan (born 1974) is the Ray D. and Mary T.

Why does K. Andre Mkhoyan matter?

Because it connects several engineering ideas at once: it gives you a definition you can apply, a quantity you can calculate, and a way to check whether a result is plausible.

How should I study K. Andre Mkhoyan?

Read the excerpt, restate it from memory, then work through the examples and applications listed on this page. The five-step study plan above takes about twenty minutes.

What does this page cover?

It gives you a compact reference excerpt plus original lgStudy explanations, examples, applications and study material on K. Andre Mkhoyan.