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Plasma ashing

Plasma ashing is a engineering topic covered in the lgStudy science library. This page brings together a partial reference excerpt, illustrations, worked examples, real-world applications and a short study plan, so you can understand Plasma ashing rather than just read about it. In short: In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a plasma source, a monatomic (single atom) substance known as a reactive species is generated.

Key takeaways

  • Plasma ashing belongs to engineering; place it in that map before memorising details.
  • Learn the definition first, then one example that makes the definition concrete.
  • Connect Plasma ashing to a quantity you can measure, compute or draw — that is where exam questions come from.
  • Reproduce the core statement of Plasma ashing from memory before moving on to harder problems.

Reference excerpt

In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a plasma source, a monatomic (single atom) substance known as a reactive species is generated. Oxygen or fluorine are the most common reactive species. Other gases used are N2/H2 where the H2 portion is 2%. The reactive species combines with the photoresist to form ash which is removed with a vacuum pump. Typically, monatomic oxygen plasma is created by exposing oxygen gas (O2) at a low pressure to high power radio waves, which ionise it. This process is done under vacuum in order to create a plasma. As the plasma is formed, many free radicals and also oxygen ions are created. These ions could damage the wafer due to the electric field build up between the plasma and the wafer surface. Newer, smaller circuitry is increasingly susceptible to these charged particles that can get implanted into the surface. Originally, plasma was generated in the process chamber, but as the need to get rid of the ions has increased, many machines now use a downstream plasma configuration, where plasma is formed remotely and the desired particles are channeled to the wafer. This allows electrically charged particles time to recombine before they reach the wafer surface, and prevents damage to the wafer surface.

Types Two forms of plasma ashing are typically performed on wafers. High temperature ashing, or stripping, is performed to remove as much photo resist as possible, while the "descum" process is used to remove residual photo resist in trenches. The main difference between the two processes is the temperature the wafer is exposed to while in an ashing chamber. Typical issues arise when this photoresist has undergone an implant step previously and heavy metal are embedded in the photoresist and it has experienced high temperatures causing it to be resistant to oxidizing. Monatomic oxygen is electrically neutral and although it does recombine during the channeling, it does so at a slower rate than the positively or negatively charged free radicals, which attract one another. This means that when all of the free radicals have recombined, there is still a portion of the active species available for process. Because a large portion of the active species is lost to recombination, process times may take longer. To some extent, these longer process times can be mitigated by increasing the temperature of the reaction area. This also contribute to the observation of the spectral optical traces, these can be what is normally expected when the emission declines, the process is over; it can also mean that spectral lines increase in illuminance as the available reactants are consumed causing a rise in certain spectral lines representing the available ionic species.

See also Plasma etching

References

Worked examples

Example 1 — a first encounter with Plasma ashing

Start with the simplest possible case. Write down what Plasma ashing claims or describes in one sentence, then invent the smallest concrete situation in which that sentence is true. In engineering, the smallest case is usually a single object, a single equation or a single measurement. Check that every symbol or term in your sentence has a meaning in that case.

Example 2 — changing one variable

Take the situation from Example 1 and change exactly one quantity: double it, halve it, or set it to zero. Predict what should happen to Plasma ashing before you calculate. Comparing your prediction with the result is the fastest way to find out whether you understand the idea or only the words.

Example 3 — an exam-style question

Typical questions about Plasma ashing ask you to (a) state it precisely, (b) apply it to given data, and (c) explain a limitation. Practise writing all three answers in under five minutes; the third part is what separates a full-mark answer from an average one.

Applications of Plasma ashing

In research
Plasma ashing appears in engineering research whenever the underlying quantities have to be modelled precisely. Papers usually cite it as a starting assumption and then explore where it breaks down.
In technology and industry
Engineering practice reuses Plasma ashing in design rules, simulations and safety margins. Knowing the idea lets you read a specification sheet and understand why the numbers look the way they do.
In the classroom
Plasma ashing is common in secondary-school and first-year university syllabi. It links to neighbouring topics Materials science stubs, Plasma processing, Semiconductor device fabrication, so understanding it makes those chapters shorter.
In everyday life
Look for Plasma ashing outside the textbook — in sport, cooking, traffic, electronics or the sky above you. An example you found yourself is remembered far longer than one you were given.

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How to study Plasma ashing in 20 minutes

  1. Read the reference excerpt below once, without taking notes.
  2. Close the page and write down what Plasma ashing means in your own words.
  3. Compare your version with the excerpt and mark what you missed.
  4. Work through the three examples above with pen and paper.
  5. Explain Plasma ashing out loud to somebody else — or to Teacher Smith in the lgStudy chat.

Frequently asked questions

What is Plasma ashing in simple terms?

In semiconductor manufacturing plasma ashing is the process of removing the photoresist (light sensitive coating) from an etched wafer. Using a plasma source, a monatomic (single atom) substance known as a reactive species is generated.

Why does Plasma ashing matter?

Because it connects several engineering ideas at once: it gives you a definition you can apply, a quantity you can calculate, and a way to check whether a result is plausible.

How should I study Plasma ashing?

Read the excerpt, restate it from memory, then work through the examples and applications listed on this page. The five-step study plan above takes about twenty minutes.

What does this page cover?

It gives you a compact reference excerpt plus original lgStudy explanations, examples, applications and study material on Plasma ashing.

Tags

  • Materials science stubs
  • Plasma processing
  • Semiconductor device fabrication

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