Power electronics is the application of electronics to the control and conversion of electric power. The first high-power electronic devices were made using mercury-arc valves. In modern systems, the conversion is performed with semiconductor switching devices such as diodes, thyristors, and power transistors such as the power MOSFET and IGBT. In contrast to electronic systems concerned with the transmission and processing of signals and data, substantial amounts of electrical energy are processed in power electronics. An AC/DC converter (rectifier) is the most typical power electronics device found in many consumer electronic devices, e.g. television sets, personal computers, battery chargers, etc. The power range is typically from tens of watts to several hundred watts. In industry, a common application is the variable-speed drive (VSD) that is used to control an induction motor. The power range of VSDs starts from a few hundred watts and ends at tens of megawatts. The power conversion systems can be classified according to the type of the input and output power:
AC to DC (rectifier) DC to AC (inverter) DC to DC (DC-to-DC converter) AC to AC (AC-to-AC converter)
History Power electronics started with the development of the mercury-arc rectifier. Invented by Peter Cooper Hewitt in 1902, it was used to convert alternating current (AC) into direct current (DC). From the 1920s on, research continued on applying thyratrons and grid-controlled mercury-arc valves to power transmission. Uno Lamm developed a mercury valve with grading electrodes making them suitable for high-voltage direct current power transmission. In 1933 selenium rectifiers were invented. Julius Edgar Lilienfeld proposed the concept of a field-effect transistor in 1926, but it was not possible to actually construct a working device at that time. In 1947, the bipolar point-contact transistor was invented by Walter H. Brattain and John Bardeen under the direction of William Shockley at Bell Labs. In 1948 Shockley's invention of the bipolar junction transistor (BJT) improved the stability and performance of transistors, and reduced costs. By the 1950s, higher power semiconductor diodes became available and started replacing vacuum tubes. In 1956, the silicon controlled rectifier (SCR) was introduced by General Electric, greatly increasing the range of power electronics applications. By the 1960s, the improved switching speed of bipolar junction transistors had allowed for high-frequency DC/DC converters. R. D. Middlebrook made important contributions to power electronics. In 1970, he founded the Power Electronics Group at Caltech. He developed the state-space averaging method of analysis and other tools crucial to modern power electronics design.
Power MOSFET
In 1957, Frosch and Derick were able to manufacture the first silicon dioxide field effect transistors at Bell Labs, the first transistors in which drain and source were adjacent at the surface. Subsequently, Dawon Kahng led a paper demonstrating a working MOSFET with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D'Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device. In 1969, Hitachi introduced the first vertical power MOSFET, which would later be known as the VMOS (V-groove MOSFET). From 1974, Yamaha, JVC, Pioneer Corporation, Sony and Toshiba began manufacturing audio amplifiers with power MOSFETs. International Rectifier introduced a 25 A, 400 V power MOSFET in 1978. This device allows operation at higher frequencies than a bipolar transistor, but is limited to low voltage applications. The power MOSFET is the most common power device in the world, due to its low gate drive power, fast switching speed, easy advanced paralleling capability, wide bandwidth, ruggedness, easy drive, simple biasing, ease of application, and ease of repair. It has a wide range of power electronic applications, such as portable information appliances, power integrated circuits, cell phones, notebook computers, and the communications infrastructure that enables the Internet. In 1982, the insulated-gate bipolar transistor (IGBT) was introduced. It became widely available in the 1990s. This component has the power handling capability of the bipolar transistor and the advantages of the isolated gate drive of the power MOSFET.
Devices
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