Static secondary-ion mass spectrometry, or static SIMS, is a secondary-ion mass spectrometry technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid, which may be a metal, semiconductor, or plastic, with insignificant disturbance to its composition and structure. It is one of the two principal modes of operation of SIMS, which is the mass spectrometry of ionized particles emitted by a solid (or sometimes liquid) surface upon bombardment by energetic primary particles.
Mechanism Most of the energy of the primary ions is dissipated into the near-surface region of the solid by a series of binary collisions. This results in ejection (sputtering) of so-called "secondary" particles such as electrons, atoms, molecules, and ions from the surface. In SIMS, it is these secondary ions which are detected and analyzed by a mass spectrometer to produce a mass spectrum of a surface for a detailed chemical analysis of the surface or the solid. The secondary-ion current is given by
I i ± = I p f i ± C i S i η i , {\displaystyle I_{i}^{\pm }=I_{p}f_{i}^{\pm }C_{i}S_{i}\eta _{i},}
where ± refers to a positive or negative particle, Ip is the incident ion current, f±i is the fraction of particles sputtered as ions, Si is the sputtering yield of both ions and neutrals, Ci is the concentration of the ith element (corrected for isotopic abundance) in the sputtered volume, ηi is the collection efficiency of the SIMS instrument, Ip = d2j/4, d is the diameter of a Gaussian-shaped beam, and j is the current density.
All the secondary ions generated in SIMS analysis originate from the topmost monolayers of the bombarded solid. This means that all different modes of SIMS analysis are basically surface analysis; secondary-ion emissions—atomic as well as molecular—reflect the chemical composition of the near-surface region of the bombarded solid. However, the intention of different SIMS analyses may be quite different. This depends on the erosion rate of the surface, which is controlled by the dose of the primary ions. It may be bulk analysis (dynamic SIMS) or a true analysis of originally uppermost monolayer of a condensed phase (static SIMS).
Primary operating conditions Ion bombardment of a surface may result in a drastic change of its chemical composition and structure. These changes include sputtering, amorphization, implantation, diffusion, chemical reactions, and so on. All these changes are limited to a small region surrounding the path of the primary ion into the solid. For static SIMS, each subsequent primary ion hits an undamaged area and a total of only 0.1-1% of the atomic sites are bombarded during the measurement. To ensure this, very low primary current densities are used, generally in the range of 10−10 to 10−9 A/cm2 (primary ion dose is below 1012 – 1013 ions/cm2). This leads to extremely small sputtering rates of fraction of a monolayer per hour and hence small secondary-ion current density. Additionally, these emitted secondary ions are of low kinetic energy and emitted up to 20 nm from the impact site with surface annealing occurring in femtoseconds. These reasons make SSIMS a purely surface analysis technique causing negligible damage to the surface and with detection limits as low as 10−8 monolayer (ML).
Spectrum The mass spectrum of the secondary ions emitted from the bombarded surface during SSIMS provides direct information of not only the chemical composition but also of the chemical structure of the bombarded area. This is because the mass spectrum includes cluster ions as well as elemental ions. These cluster ions reflect the surface chemistry in a detailed way. The figure shows the mass spectrum obtained from a SSIMS analysis of polytetrafluoroethylene (PTFE). The positive ion spectrum shows positive atomic ions (i.e. C+) and molecular ions (i.e. CF+, CF3+, C3F3+) of the target. The negative ion spectrum shows negative atomic ions (i.e. F−) and molecular ions (i.e. F2−, CF3−, C3F3−).
History Static SIMS was introduced by Benninghoven at the University of Münster in 1969. He applied the technique of SIMS to study surfaces in UHV by deliberately using low primary-ion currents covering large areas. Initially, most SSIMS was performed using quadrupole mass analyzers. However, in the mid-1980s, it was realized that time-of-flight mass spectrometers are more efficient for this mode of SIMS. Compared to other surface techniques, such as Auger and photoelectron spectroscopy, SSIMS offers some unique features, including isotope sensitivity, hydrogen sensitivity, direct compound detection by molecular secondary-ion emission, and extremely high sensitivity, very often in the ppm range. However, one problem in static SIMS applications may be quantification. This problem can be overcome by using a combination of electron-spectroscopic techniques such as Auger electron spectroscopy (AES) and photoelectron spectroscopy (UPS or XPS) with static SIMS.
Application in surface science Static SIMS has been used in the investigation of the initial process of oxidation where only the first two or three metal layers participate in the oxidation. Static SIMS gives a rigorous test of surface cleanliness, as it can detect species at ppm concentrations. Static SIMS is used in the investigation of the nature of adsorption (molecular or dissociative). For example, dissociative adsorption of CO on a metal surface (M) is characterized by MC+, MO+, M2O+, and M2C+ secondary ions (Fe and W), and molecular adsorption is identified by MCO+ and M2CO+ ions (Cu, Pd, Ni and Fe). Similarly, it also helps in the investigation of binding energies, chemical structure of the adsorbate, interaction between adsorbate molecules, and reactivity of adsorbate.
Instrumentation
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