A TRIAC (triode for alternating current; also bidirectional triode thyristor or bilateral triode thyristor) is a three-terminal electronic component that conducts current in either direction when triggered. The term TRIAC is a genericized trademark. TRIACs are a subset of thyristors (analogous to a relay in that a small voltage and current can control a much larger voltage and current) and are related to silicon controlled rectifiers (SCRs). TRIACs differ from SCRs in that they allow current flow in both directions, whereas an SCR can only conduct current in a single direction. Most TRIACs can be triggered by applying either a positive or negative voltage to the gate (an SCR requires a positive voltage). Once triggered, SCRs and TRIACs continue to conduct, even if the gate current ceases, until the main current drops below a certain level called the holding current. Gate turn-off thyristors (GTOs) are similar to TRIACs but provide more control by turning off when the gate signal ceases. The bidirectionality of TRIACs makes them convenient switches for alternating-current (AC). In addition, applying a trigger at a controlled phase angle of the AC in the main circuit allows control of the average current flowing into a load (phase control). This is commonly used for controlling the speed of a universal motor, dimming lamps, and controlling electric heaters. TRIACs are bipolar devices.
Operation
To understand how TRIACs work, consider the triggering in each of the four possible combinations of gate and MT2 voltages with respect to MT1. The four separate cases (quadrants) are illustrated in Figure 1. Main terminal 1 (MT1) and main terminal 2 (MT2) are also referred to as anode 1 (A1) and anode 2 (A2) respectively. The relative sensitivity depends on the physical structure of a particular triac, but as a rule, quadrant I is the most sensitive (least gate current required), and quadrant 4 is the least sensitive (most gate current required). In quadrants 1 and 2, MT2 is positive, and current flows from MT2 to MT1 through P, N, P and N layers. The N region attached to MT2 does not participate significantly. In quadrants 3 and 4, MT2 is negative, and current flows from MT1 to MT2, also through P, N, P and N layers. The N region attached to MT2 is active, but the N region attached to MT1 only participates in the initial triggering, not the bulk current flow. In most applications, the gate current comes from MT2, so quadrants 1 and 3 are the only operating modes (both gate and MT2 positive or negative against MT1). Other applications with single polarity triggering from an IC or digital drive circuit operate in quadrants 2 and 3, where MT1 is usually connected to positive voltage (e.g. +5V) and gate is pulled down to 0V (ground).
Quadrant 1
Quadrant 1 operation occurs when the gate and MT2 are positive with respect to MT1.Figure 1 The mechanism is illustrated in Figure 3. The gate current makes an equivalent NPN transistor switch on, which in turn draws current from the base of an equivalent PNP transistor, turning it on also. Part of the gate current (dotted line) is lost through the ohmic path across the p-silicon, flowing directly into MT1 without passing through the NPN transistor base. In this case, the injection of holes in the p-silicon makes the stacked n, p and n layers beneath MT1 behave like a NPN transistor, which turns on due to the presence of a current in its base. This, in turn, causes the p, n and p layers over MT2 to behave like a PNP transistor, which turns on because its n-type base becomes forward-biased with respect to its emitter (MT2). Thus, the triggering scheme is the same as an SCR. The equivalent circuit is depicted in Figure 4. However, the structure is different from SCRs. In particular, TRIAC always has a small current flowing directly from the gate to MT1 through the p-silicon without passing through the p-n junction between the base and the emitter of the equivalent NPN transistor. This current is indicated in Figure 3 by a dotted red line and is the reason why a TRIAC needs more gate current to turn on than a comparably rated SCR. Generally, this quadrant is the most sensitive of the four. This is because it is the only quadrant where gate current is injected directly into the base of one of the main device transistors.
Quadrant 2
Quadrant 2 operation occurs when the gate is negative and MT2 is positive with respect to MT1.Figure 1 Figure 5 shows the triggering process. The turn-on of the device is three-fold and starts when the current from MT1 flows into the gate through the p-n junction under the gate. This switches on a structure composed by an NPN transistor and a PNP transistor, which has the gate as cathode (the turn-on of this structure is indicated by "1" in the figure). As current into the gate increases, the potential of the left side of the p-silicon under the gate rises towards MT1, since the difference in potential between the gate and MT2 tends to lower: this establishes a current between the left side and the right side of the p-silicon (indicated by "2" in the figure), which in turn switches on the NPN transistor under the MT1 terminal and as a consequence also the pnp transistor between MT2 and the right side of the upper p-silicon. So, in the end, the structure which is crossed by the major portion of the current is the same as quadrant-I operation ("3" in Figure 5).
Quadrant 3
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